Mahdi Pourfath. ORCID iD. Print view. Open a version of this ORCID record formatted for printing. List of computer science publications by Mahdi Pourfath. Ph.D, Vienna University of Technology, Electrical Engineering – Microelectronics . → , Sharif University of Technology, Electrical Engineering -.
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Check out the top books of the year on our page Best Books of The Green function is studied in detail for systems both under equilibrium and under nonequilibrium conditions. In this structure source and drain are composed of a monolayer of graphene and hexagonal boron nitride h-BN is used as a tunneling barrier. Other books in this series. The optical transition matrix elements and the resulting selection rules were also ;ourfath. His scientific interests include the numerical study of novel nano-electronic devices.
His research interests include nanoelectronics, quantum transport, and two-dimensionals. In order to study the static operation of these devices more deeply, we plan to include scattering into our simulations, which can be achieved by using Buetikker probes. porfath
mehdi pourfath – Personal page – دانشکده مهندسی برق و کامپیوتر دانشگاه تهران
The contact between metal and CNT can be of ohmic or Schottky type. Mahdi Pourfath was born in Tehran, Iran, in Looking for beautiful books? An atomistic simulation based on the non-equilibrium Green’s function formalism is employed.
He studied electrical engineering at the Sharif University of Technology, where he received the degree of Master of Science in One of the many interesting properties of Dirac electrons in graphene are the drastic changes of the conductivity of graphene-based structures with the confinement of electrons.
Hierarchical Device Simulation Christoph Jungemann. Structures that realize this behavior are carbon nanotubes and Graphene NanoRibbons GNRs that impose periodic and zero boundary conditions, respectively, on the transverse electron wave-vector. In the next step we employed the non-equilibrium Green’s function formalism to perform a comprehensive study of photo detectors based on GNRs.
Simulation results indicate the importance of the gate-source and gate-drain spacer lengths. In short devices less than nm carrier transport through the device is nearly ballistic. Other 2D materials with a nonzero bandgap, such as single and few-layer transition metal dichalcogenides TMDsoffer promising electrical and optical properties for future electronic applications. His scientific interests include the numerical study of novel nanoelectronic devices. Unlike conventional strain gauges where geometric and piezoelectric terms contribute to the gauge factor, in these materials the intervalley phonon-limited mobility is strongly affected by strain, which results in large gauge factors.
Furthermore, it can be inferred from the results that due to the smaller density of states and the resulting smaller quantum capacitance of GNRs as compared to graphene, better switching and frequency response can be achieved for VTGNRFETs. His scientific interests include quantum transport, simulation of carbon nanotubes and nanoelectronic devices. Mahdi Pourfath MSc Dr. Unstrained mobility and mobility enhancement with a strain strongly depend on the energy distance between the K- and Q-valleys.
He joined the Institute for Microelectronics in Octoberwhere he received his doctoral degree in technical sciences in July and is currently employed as a post-doctoral researcher. Overall mobility solidmobility in K-valleys dashedand mobility in Q-valleys dotted. By changing the gate voltage the transmission coefficient of holes through the device is modulated and, as a result, the total current changes. He joined the Insitute for Microelectronics in Octoberwhere he is currently working on his doctoral degree.
Due to the complexity of the formalism, one should have a deep understanding of the underlying principles and use smart approximations and numerical methods for solving the kinetic equations at a reasonable computational time.
Even in the presence of extrinsic scattering sources, the gauge factors of these materials are much larger than those reported for most of the materials typically used for strain gauges.
In these structures tunneling between source and drain is controlled by the gate-source voltage. All the elements of the kinetic equations, which are the device Hamiltonian, contact self-energies and scattering self-energies, are examined and efficient methods for their evaluation are explained. Therefore the device characteristics can be well optimized by careful geometric design. Our studies pave the way for improving the performance of TMD-based electronic devices by strain engineering.
For dynamic response, it is also desirable to use methods based on non-QSA.
Recently, a graphene TFET based on a vertical graphene heterostructure was proposed. The lowest- and the second-lowest band minima in the conduction pourfaty of these materials are pourfathh as K- and Q-valleys. Product details Format Paperback pages Dimensions x x Erasmus Langer Siegfried Selberherr. We performed a comprehensive theoretical study of the optical properties of GNRs resulting in a general analytical expression for the linear optical conductivity for light polarized parallel to the ribbons axis by employing an orthogonal tight-binding model with nearest neighbor interaction.
Table of contents Review of quantum mechanics. Finally, the application of these methods to study novel electronic devices such as nanotubes, graphene, Si-nanowires, and low-dimensional thermoelectric devices and photodetectors are discussed.
He joined the Institute for Microelectronics in Octoberwhere he received his doctoral degree in technical sciences in July and is currently employed as a post-doctoral researcher. Description For modeling the transport of carriers in nanoscale devices, a Green-function formalism is the most accurate approach.