IRF9Z30 Transistor Datasheet, IRF9Z30 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. IRF9Z30 Hexfet Power Mosfet. Features. P-Channel Verasatility Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent. Parameters provided in datasheets and / or specifications may vary in different applications IRFZ30 IRF9Z30 IRFZ30PBF SUP40NE3 FESB8AT-E3/

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IRF9Z30 Datasheet(PDF) – International Rectifier

Such statements are not binding statements about the suitability of products for a particular application. Ir9fz30, 4Dec Document Number: Description N-channel 60 V, 0. Storage Temperature Range Soldering Temperature, for 10 seconds 1. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts.

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Typical Output Characteristics Fig. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations.

A Qualified More information. High Performance Schottky Rectifier, 1. A, 4Dec 6 Document Number: Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements ird9z30 are often iff9z30 on Vishay products in generic applications. To make this website work, we log user data and share it with processors.


Typical Gate Charge vs. Repetitive rating; pulse width limited by maximum junction temperature see fig. N-channel 55 V, 4. This device is suitable. C Soldering Temperature, for dqtasheet seconds 1.

(PDF) IRF9Z30 Datasheet download

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct daasheet Vishay. R DS on max. Data Sheet June File Number Typical Transfer Characteristics Fig.

Bryce Goodman 1 years ago Views: Order code Marking Datasneet Packaging. N-channel 60V – 0. Q g typical nc 27 A. A, 4Dec 4 Document Number: Start display at page:. Pchannel power MOSFETs are intended for use in power stages where complementary symmetry with nchannel devices offers circuit simplification. N-channel 80 V, 0.

Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. They retain all of the features of the more common nchannel Power MOSFET s such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability.

To the maximum extent permitted by applicable law, Vishay disclaims i any and all liability arising out of the application or use of any product, ii any and all liability, including without limitation special, consequential or incidental damages, and iii any and all implied warranties, including warranties of fitness for particular purpose, noninfringement and merchantability.


Switching Time Test Circuit Fig. This device is suitable More information. Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers. General Features Figure 1. Maximum Drain Current vs. The efficient geometry and unique processing of the power MOSFET design achieve very low onstate resistance combined with high transconductance and extreme device ruggedness. High Performance Schottky Rectifier, 3. This advanced technology More information.

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Except as expressly indicated in writing, Vishay products are not designed for use in medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death.