IRF530N DATASHEET PDF

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ? IRFN Transistor Datasheet, IRFN Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. IRFN 22A, V, Ohm, N-Channel, Power MOSFET. Features. Ultra Low On-Resistance Details, datasheet, quote on part number: IRFN.

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Drain to Source Breakdown Voltage.

Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. Life support devices or systems are devices or. Irf530h following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is. Peak Current vs Pulse Width Curve.

REV 15 July CB 15 14 1.

Semiconductor reserves the right to make changes at. RGATE 9 20 2. This datasheet contains specifications on a product. RSLC2 5 50 1e3. Gate datashewt Source Voltage. LGATE 1 9 5.

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IRFN MOSFET Datasheet pdf – Equivalent. Cross Reference Search

RGATE 9 20 2. RSLC2 5 50 1e3. Semiconductor reserves the right to make changes at.

Operating and Storage Temperature. This datasheet contains specifications on a product. Thermal Resistance Junction to. Zero Gate Voltage Drain Current. Gate to Source Threshold Voltage.

IRF530N MOSFET. Datasheet pdf. Equivalent

Specifications may change in. The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is.

This datasheet contains final specifications. This is a stress only rating and operation of the. Gate to Drain “Miller” Charge.

Gate to Drain “Miller” Charge. LGATE 1 9 5. Thermal Resistance Junction to Case. Gate Charge at 10V. Specifications may change in. Drain to Source On Resistance. Gate to Source Leakage Current. REV 15 July The datasheet is printed for reference information only.

(PDF) IRF530N Datasheet download

Test Circuits and Waveforms. This datasheet contains final specifications. Gate Charge at 10V. Zero Gate Voltage Drain Current. Fairchild Semiconductor reserves the right to make. Derate Above 25 o C. Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device.

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Gate to Source Threshold Voltage. Operating and Storage Temperature. Source to Drain Diode Specifications. Figures 6, 14,