Fundamentals of Modern VLSI Devices [Yuan Taur, Tak H. Ning] on . *FREE* shipping on qualifying offers. This book examines in detail the basic. Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. James Kao, Siva Narendra, Anantha Chandrakasan, Subthreshold leakage modeling and reduction techniques, Proceedings of the IEEE/ACM.
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The treatment of the subject matter is outstandingly thorough, covering the basic device physics eevices technology integration of bipolar and field-effect metal-oxide-semiconductor MOSFET and highlighting the subtle tradeoffs involved in modern transistor design and optimization. Cundamentals the content and organization of this book I rate it 4. Visit our Beautiful Books page and find lovely books for kids, photography lovers and more.
Good textbook for grad students learning device fundamentals. It will also be a valuable reference volume for practicing engineers involved in research and development in the electronics industry. Benjamin Gojman added it May 21, We’re featuring millions of their reader ratings on our book pages to help you find your new favourite book. This is too concise for the beginner to understand but it is good for an engineer involved in this field for several years.
I have to mention that there are some bolded words in each chapter of the book.
Fundamentals of Modern VLSI Devices
Equations and parameters provided are checked continuously against the reality of silicon data. Zhouchangwan Yu rated it did not like it Jun 09, Ning No preview available – Write a customer review.
You need to have some basic knowledge of device physics before reading the book. There was a problem filtering reviews right now. If you are a seller for this product, would you like to suggest updates through seller support? Sourav Mahmood rated it it was amazing Nov 11, He spent 20 years at IBM’s T. Pejman Khosropour rated it liked it Feb 06, Introduction to Solid State Physics.
Why the seller did not state the bad quality of binding of edition fundamental Get fast, free shipping with Amazon Prime. The quality of this reprinted version is as good as I expect. Changrong marked it as to-read Nov 05, The book contains many exercises, and can be used as a textbook for senior undergraduate or first-year graduate courses on microelectronics or VLSI devices.
Lists with This Book. Rajendra marked it as to-read Sep 22, Fuhdamentals your thoughts with other customers. Gerald marked it as to-read Jul 22, Zhangjy added it Feb 17, Bipolar performance factors; Appendices. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.
I rate 2 star for its binding quality. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices.
Looking for beautiful books? So the total is 3 or 3. They also discuss in detail the scaling, and physical limits to the scaling, of CMOS and bipolar devices. The typesetting and diagrams are superb. Every chapter is revised to atur advances in VLSI devices in the last 10 years since the publication of the original book.
Fundamentals of Modern VLSI Devices by Yuan Taur
East Dane Designer Men’s Fashion. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. Cambridge University Press; 2 edition June 24, Language: Review “For the past several years, I’ve taught from Taur and Ning’s book because it’s best at connecting advanced device physics to real world device, circuit, and system technology.
Zhihong added it Sep 30, Solid State Electronic Devices 7th Edition. The authors highlight the intricate interdependencies and subtle trade-offs between those device parameters, such as power consumption and packing density, that affect circuit performance and manufacturability. Vignesh Reviraj marked it as to-read Apr 30,