BUT11AF datasheet, BUT11AF pdf, BUT11AF data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, NPN Silicon Transistor. BUT11AF. GENERAL DESCRIPTION. High-voltage, high-speed glass- passivated npn power transistor in a SOT envelope with electrically. BUT11AF NPN Silicon Transistor. Absolute Maximum Ratings TC=25°C unless otherwise noted. Symbol VCBO Parameter Collector-Base Voltage: BUT11AF.
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August 8 Rev 1. Switching times waveforms with inductive load. Product specification This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Stress above one or more of the limiting values may cause permanent damage to the device. August 7 Rev 1. Region of permissible DC operation.
Typical base-emitter and collector-emitter saturation voltages. Application information Where application information is given, it is advisory and does not form part of the specification. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
Test circuit inductive load. Oscilloscope display for VCEOsust.
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Reverse bias safe operating area. Test circuit resistive load. Typical DC current gain.
Normalised power derating and second breakdown curves. Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide.
Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 2 Rev 1. No liability will be accepted by the publisher for any consequence of its use.
BUT11AF datasheet, Pinout ,application circuits NPN Silicon Transistor
August 4 Ptot max and Ptot peak but11xf lines. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. SOT; The seating plane is electrically isolated from all terminals.
Switching times waveforms with resistive load. Forward bias safe operating area.
Extension for repetitive pulse operation. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. UNIT – – 1. Typical base-emitter saturation voltage. Exposure to limiting values for extended periods may affect device reliability. The information presented in but111af document does not form part of any dtaasheet or contract, it is believed to be accurate and reliable and may be changed without notice. Refer to mounting instructions for F-pack envelopes.
Test circuit for VCEOsust.