BUT11AF DATASHEET PDF

BUT11AF datasheet, BUT11AF pdf, BUT11AF data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, NPN Silicon Transistor. BUT11AF. GENERAL DESCRIPTION. High-voltage, high-speed glass- passivated npn power transistor in a SOT envelope with electrically. BUT11AF NPN Silicon Transistor. Absolute Maximum Ratings TC=25°C unless otherwise noted. Symbol VCBO Parameter Collector-Base Voltage: BUT11AF.

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BUT11AF Datasheet(PDF) – Motorola, Inc

Application information Where application information is given, it is advisory and does not form part of the specification. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. August 7 Rev 1. SOT; The seating plane is electrically isolated from all terminals. Test circuit for VCEOsust.

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Exposure to limiting values for extended periods may affect device reliability. Product specification This data sheet contains final product specifications. Refer to mounting instructions for F-pack envelopes.

Region of permissible DC operation. Forward bias safe operating area.

But11af datasheet view

Switching times waveforms with resistive load. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. No liability will be accepted by the publisher for any consequence of its use.

August 8 Rev 1. Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide.

Reverse bias safe operating area.

Normalised power derating and second breakdown curves. UNIT – – 1.

Switching times waveforms with inductive load. August 4 Ptot max and Ptot peak max lines. The bit11af presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice.

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Datasheet «BUT11AF»

Extension for repetitive pulse operation. Typical DC current gain. Typical base-emitter saturation voltage. August 2 Rev 1.

BUT11AF DATASHEET

Stress above one or more of the limiting values may cause permanent damage to the device. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Test but11af inductive load. Typical base-emitter and collector-emitter saturation voltages. Oscilloscope display for VCEOsust.

Test circuit resistive load. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.