2N from Fairchild Semiconductor. Find the PDF Datasheet, Specifications and Distributor Information. 2N Datasheet PDF Download – NPN Transistoor, 2N data sheet. 2N datasheet, 2N pdf, 2N data sheet, datasheet, data sheet, pdf, Central Semiconductor, Leaded Small Signal Transistor General Purpose.

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As a switch, or as an amplifier, the type 2N offers capabilities beyond any now avail- able!

Heat-treatable PD is particularly suited for applica- tions requiring extensive cold working datasheey upsetting. Conventional case for convenient mounting The 2NN series formerly Type offers the convenience of a low mounting profile.

2N Datasheet(PDF) – Motorola, Inc

Total function logic Connection oriented packaging Connection oriented batch manufacturing See how these unique features will benefit you. KF IOC 0. Under maximum ratings, manufacturers were asked to specify collector power dissipa- tion at 25 C case temperature, this general- ly being the most meaningful single dissipa- tion rating. Silicon Capacitor Diodes Medium 0 devices with good stability dwtasheet low leakage.

AJ ,ge npn, AJ. South Minneapolis 8, Minn. These designs make use of the R-C compensation to assure long life and high reliability. V C eo is related to collector- emitter diode breakdown and V C bo to col- lector-base diode breakdown.


NTE – NPN Transistor, SI RF/IF Amp/Oscillator

eatasheet These methods have yielded high voltage rat- ings but other characteristics of the resulting transistors do not compare favorably with those of surface passi- vated devices. Dayasheet Park 16, Minn. General Electric Semicon- ductor Products Dept.

As a result of channeling, some man- ufacturers have reverted to earlier sili- con mesa structures or have deliber- ately circumvented the oxide passiva- tion in planar transistors in order to produce high voltage devices. Threaded two-piece construction tightens to grip both sides of transistor weld flange. RF in FM rec. Collector-to-base voltage is 30 v, min; collector-to- emitter, 20 v, min; total dissipa- tion at 25 C free air, mw.

Tl, RCA [ 85 1. Microminiature devices for datasheeh density circuit applications. The Reader-Service numbers for the prod- ucts can be circled on either the Reader -Service card in the main section or the special one in the back of this Data Chart. Phone code 2b914 high breakdown voltages, exceptionally low leakage currents, typically 20 nanoamps, meas- ured at stringent bias conditions.

For years, the industry had been working to design high voltage silicon PNP transistors with dxtasheet low leakage currents normally associated with NPN types, surface passivated by the planar process. After long testing at worse-than-actual condi- tions, the clean Sylvania junctions confirm: Forward currents to 0. The device is packaged in a four-lead TO case. GJ ,si 2N TR npn. The result is reliability without parallel.


In order of increasing forward-current transfer ratio. A heat-treatable alloy, PD does not lose its high strength characteristics after exposure to high tem- datasbeet. Recovery times as low as 2 nsec using a sampling scope circuit.

Bipolar NPN RF transistor, TO-18

Specifications include an NF of 4. These new subminiature devices offer you minimum cutoff frequency of 90 gc to gc at -2 volts with low junction capacitance – Cj 0 bias from 0.

It fits all TO-5 and TO-9 cases, regardless of case diameter.

Since the interconnections are always the same, other functions count- ing, decoding, accumulating, etc. Write Indus- trial Relations Director. He will be glad to assist you. Key to the letter codes is: