2N3035 DATASHEET PDF

2N Specifications: Polarity: NPN ; Package Type: TO, 3 PIN. Details, datasheet, quote on part number: 2N Symbol. Parameter. Value. Unit. 2N 2N VCEO. Collector-Emitter Voltage (IE = 0). V. VCEV. Collector-Emitter Voltage (VBE = V). V. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may.

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The KD have higher power and higher current than 2N It is by now unlikely to satasheet obtain a genuine 2N transistor when using popular sales platforms such as Amazon or Ebay; classic electronics distributors are mostly still able to properly source them. The frequency at which gain begins to drop off may be much lower, see below.

The team of design, production, and applications engineers received RCA Electronic Components achievement awards in An MJ PNPwhich is also manufactured using the epitaxial process today, is a complementary transistor to the 2N The 2N is a silicon NPN power transistor intended for general purpose applications.

The art of electronics 2nd ed. The 2N, 2N, and 2N devices, for example, which date back to the s but have been improved, are still useful in new designs and are still popular for experimenters. With changes to semiconductor manufacturing technology, the original process became economically 2n0335 in the mids, and a similar device was created using epitaxial base technology. The 2Nwith a TO-3 case has slightly lower gain but significantly higher maximum ratings W, Vceo, 16 Amps.

The total power dissipation written P D in most American datasheets, P tot in European ones depends on the heatsink to which the 2N is connected.

It has a transition frequency of 2. With an “infinite” heatsink, that is: Other manufacturers around this time also datashdet specify similar values e. Views Read Datashet View history. It was second sourced by other manufacturers; Texas Instruments listed a single-diffused mesa version of the device in an August datasheet. The 2N is a much lower power version of the 2N, rated at 25 W55 V and 4 Abut became almost obsolete about the late s when many TO devices were withdrawn from mainstream manufacturers’s lists.

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KD are packaged in a TO-3 case style called T41 by Teslait is a 20 amp80 voltwatt power transistor.

The maximum collector-to-emitter voltage for the 2N, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor; with ohms a 70 volt breakdown rating, V CERand the Collector-Emitter Sustaining voltage, V CEO susis given by ON Semiconductor.

Variants with higher voltage ratings e. Although the original 2N went into decline relative to epitaxial-base transistors because of high manufacturing costs, the epitaxial-base version continued to be used in both linear amplifiers and switching supplies.

Modern successors to the 2N can be much more suitable in fast-switching circuits or high-end audio power amplifiers. This page was last edited on 22 Novemberat Retrieved 31 October From Wikipedia, the free encyclopedia. Since the early s, the 2N transistor has been heavily targeted by counterfeiters, who substitute much smaller silicon dies with lesser power ratings, use inferior mounting techniques, and fake the markings. The exact performance characteristics depend on the manufacturer and date; before the move to the epitaxial base version in the mids the f T could be as low as 0.

The 2N remains very popular as a series pass transistor in linear power supplies and is still used in for medium- current and high- power circuits generally, including low frequency power converters although its use in audio power amplifiers and DC-to-AC inverters is now less common and its 2n30355 in higher frequency switch-mode applications never datassheet very practical. The historically-significant 2N was designed by Herb Meisel’s engineering group with RCA; it was the first multi-amp silicon daatasheet transistor to sell for less than one dollar, and became an industry workhorse standard.

2N3035 – N-P-N EPITAXIAL MESA SILICON TRANSISTORS

By using this site, you agree to the Terms of Use and Privacy Policy. Wikimedia Commons has media related to 2N It often has a transition frequency of around 3.

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Modern dataseet datasheets often, but not always, specify f T of 2. Commons category link from Wikidata. Nevertheless, a 2N and many other power transistors originating from this era cannot be assumed to have great high-frequency performance and there can be degradation of phase-shift and open-loop gain even within the audio frequency range. The device is designed dataaheet operate with an efficient heatsink, but care must be taken to dwtasheet the device properly, [7] [8] [9] else physical damage or worsened power handling may result, especially with cases or heatsinks that are not perfectly flat.

KD is a higher power equivalent used in Eastern Bloc countries, and is intended for general purpose applications. The robot builder’s bonanza 2nd ed. In the sixties and early seventies, Philips produced 23n035 devices encapsulated in TO-3 packages under the reference BDY20 described as being for “hifi” purposes and BDY38 although the BDY38 has lower voltage ratings than the 2N It was introduced in the dtasheet s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mids.

2N_PDF Datasheet Download IC-ON-LINE

Sometimes the V CBO breakdown voltage the maximum voltage between collector and base, with the emitter open, an unrealistic arrangement in practical circuits is given as the only voltage rating, which can cause confusion.

Also the higher frequency response has improved performance when used in audio amplifiers. In other projects Wikimedia Commons. Retrieved 7 November It was produced exclusively by the Czechoslovakian electronics company Tesla.

Build datashset own low-power datasbeet RCA by had changed their specification to give 2.

Retrieved from ” https: Graf; William Sheets